STM topography and manipulation of single Au atoms on Si(100)
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STM topography and manipulation of single Au atoms on Si(100)
A1_chiaravalloti_f_2009.pdf
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The low-temperature (12 K) adsorption of single Au atoms on Si(100) is studied by scanning tunneling microscopy (STM). Comparison between experimental and calculated STM topographies as well as density-functional-theory calculations of the adsorption energies enable us to identify two adsorption configurations of Au atoms between Si-dimer rows (BDRs) and on top of Si-dimer rows (TDRs). In both adsorption configurations, the Au atoms are covalently bound to two Si atoms through a partial electron transfer from Si to Au. STM manipulation confirms that the TDR adsorption configuration is metastable, whereas the BDR one is the most stable configuration.
Tallennettuna:
Kieli |
englanti |
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Sarja | Physical Review B Volume 79, Issue 24 |
Aiheet | |
ISSN |
1550-235X (electronic) |
DOI | 10.1103/physrevb.79.245431 |