Low-temperature atomic layer deposition of crystalline manganese oxide thin films
Finna-arvio
Low-temperature atomic layer deposition of crystalline manganese oxide thin films
We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10 and ozone as precursors to fabricate crystalline α-Mn2O3 and Mn3O4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60-100 °C and the latter in the range 120-160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4 thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.
Tallennettuna:
Kieli |
englanti |
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Sarja | DALTON TRANSACTIONS |
ISSN |
1477-9226 1477-9234 |
DOI | 10.1039/c6dt03040h |