Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view
Finna-arvio
Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view
The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.
Tallennettuna:
Kieli |
englanti |
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Sarja | PHYSICAL REVIEW B |
Aiheet | |
ISSN |
1098-0121 1550-235X |
DOI | 10.1103/PhysRevB.88.035204 |