Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Finna-arvio
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
javanainenturowskietalheavyioninduced.pdf
(Jyväskylän yliopisto - JYX)
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Tallennettuna:
| Kieli |
englanti |
|---|---|
| Sarja | IEEE Transactions on Nuclear Science, 8 |
| Aiheet | |
| ISSN |
0018-9499 |