Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
Finna-arvio
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
ieeetdmrjavanainen2018finalaam.pdf
(Jyväskylän yliopisto - JYX)
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation
Tallennettuna:
| Kieli |
englanti |
|---|---|
| Sarja | IEEE Transactions on Device and Materials Reliability, 3 |
| Aiheet | |
| ISSN |
1530-4388 |