Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Finna-arvio
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
MSF.1090.179.pdf
(Jyväskylän yliopisto - JYX)
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Tallennettuna:
Kieli |
englanti |
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Sarja | Materials Science Forum |
Aiheet | |
ISSN |
0255-5476 |